Plasma processing method and plasma processing apparatus

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United States of America

PATENT NO 11923229
SERIAL NO

17513425

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Abstract

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A plasma processing method includes supplying a voltage to an electrode provided in an electrostatic chuck, thereby adsorbing a substrate onto an upper surface of the electrostatic chuck; after the voltage supplied to the electrode of the electrostatic chuck is stabilized, cutting off the supply of the voltage to the electrode, thereby bringing the electrode into a floating state; and after the voltage supplied to the electrode of the electrostatic chuck is stabilized, performing a predetermined processing with plasma on a surface of the substrate adsorbed onto the electrostatic chuck.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aoki, Yusuke Miyagi, JP 46 157

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