High signal-to-noise ratio photoelectric conversion element
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United States of America Patent
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Feb 27, 2024
Grant Date -
Dec 2, 2021
app pub date -
Mar 22, 2019
filing date -
Mar 22, 2019
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Abstract
To improve an SN ratio of a photoelectric conversion element. A photoelectric conversion element (10) includes an anode (12), a cathode (16), an active layer (14) provided between the anode and the cathode, and a hole transport layer (13) provided between the anode and the active layer. The active layer includes a p-type semiconductor material, which is a polymer compound having an absorption peak wavelength of 900 nm or higher, and an n-type semiconductor material, and an energy gap between an LUMO of the n-type semiconductor material contained in the active layer and a HOMO of a hole transport material contained in the hole transport layer is less than 0.9 eV.
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