Semiconductor device and method of forming the same
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United States of America Patent
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Feb 27, 2024
Grant Date -
Mar 30, 2023
app pub date -
Sep 24, 2021
filing date -
Sep 24, 2021
priority date (Note) -
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Abstract
An apparatus includes a semiconductor substrate; an access transistor including channel, source and drain regions arranged in a vertical direction to the semiconductor substrate and a gate-electrode facing to the channel region; a storage capacitor coupled to one of the source and drain regions; a bit-line coupled to the other of the source and drain regions; and a pull-out-electrode connected to the bit-line; wherein surfaces of the source and drain regions and the pull-out-electrode on the bit-line side is arranged at substantially the same height from the upper surface of the semiconductor substrate.
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