Semiconductor Schottky rectifier device

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United States of America Patent

PATENT NO 11916117
APP PUB NO 20230070850A1
SERIAL NO

17985046

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Abstract

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A semiconductor Schottky rectifier built in an epitaxial semiconductor layer over a substrate has an anode structure and a cathode structure extending from the surface of the epitaxial layer. The cathode contact structure has a trench structure near the epi-layer and a vertical sidewall surface covered with a gate oxide layer. The cathode structure further comprises a polysilicon element adjacent to the gate oxide layer.

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Patent Owner(s)

Patent OwnerAddress
DIODES INCORPORATED4949 HEDGCOXE ROAD SUITE 200 PLANO TX 75024

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chao, Kolins Zhubei, TW 3 2
Huang, John New Taipei, TW 56 870

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