Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof

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United States of America Patent

PATENT NO 11905618
APP PUB NO 20210189591A1
SERIAL NO

17249597

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Abstract

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In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

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Patent OwnerAddress
II-VI ADVANCED MATERIALS LLC20 CHAPIN ROAD SUITE 1007 P O BOX 840 PINE BROOK NJ 07058

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gupta, Avinash Basking Ridge, US 25 111
Rengarajan, Varatharajan Flanders, US 19 90
Xu, Xueping Wesport, US 50 2236
Zwieback, Ilya Township of Washington, US 38 308

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