Doped semiconductor nanocrystals, method for preparing same and uses thereof

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United States of America

PATENT NO 11905446
SERIAL NO

17418347

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Abstract

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A set of nanocrystals comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the −III oxidation state, the nanocrystals being doped, on average per nanocrystal, by an atom of C chosen from the transition metals in the +I or +II oxidation state and various uses thereof.

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Patent Owner(s)

Patent OwnerAddress
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESFRANCE PARIS PARIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akdas, Tugce Grenoble, FR 1 0
Reiss, Peter Grenoble, FR 12 112

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