Hot spot defect detecting method and hot spot defect detecting system

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United States of America Patent

PATENT NO 11900586
SERIAL NO

17121760

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Abstract

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A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chan-Ming Hsinchu, TW 3 6
Chen, Chien-Huei Kaohsiung, TW 15 104
Chen, Kuang-Shing Hsinchu, TW 9 35
Chen, Shih-Yung Hsinchu, TW 4 6
Chen, Xiaomeng Hsinchu County, TW 121 2120
Chung, Hung-Yi Taoyuan, TW 11 39
Lee, Li-Jou Hsinchu, TW 3 6
Lin, Chien-An Hsinchu, TW 4 6
Lin, Yung-Cheng Hsinchu, TW 21 124
Su, Pei-Chao Hsinchu County, TW 9 154
Wang, Shih-Chang Hsinchu, TW 37 137
Wu, Wei-Chen Hsinchu, TW 21 1309

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