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Abstract

A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×10¹⁷ cm⁻³, an impurity concentration of oxygen between about 2×10¹⁷ cm⁻³ and about 1×10²⁰ cm⁻³, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×10¹⁶ cm⁻³, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm⁻¹ at wavenumbers of approximately 3175 cm⁻¹, 3164 cm⁻¹, and 3150 cm⁻¹, and wherein, at wavenumbers between about 3200 cm⁻¹ and about 3400 cm⁻¹ and between about 3075 cm⁻¹ and about 3125 cm⁻¹, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

First Claim