Silicon-on-insulator substrate including trap-rich layer and methods for making thereof

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United States of America

PATENT NO 11894261
SERIAL NO

17472305

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Abstract

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A silicon-on-insulator substrate includes: (1) a high-resistivity base layer including silicon and a trap-rich region including arsenic diffused within a first side of the high-resistivity base layer, wherein the trap-rich region has a thickness that is in a range of 1 to 10 microns and a trap density that is in a range of 0.8*1010 cm2 eV−1 to 1.2*1010 cm2 eV−1, wherein the high-resistivity base layer has resistivity in a range of 50 to 100 ohm-meters and a thickness in a range of 500 to 700 microns; (2) a silicon dioxide layer positioned on the first side of the high-resistivity base layer and having a thickness that is in a range of 1000 to 5000 angstroms; and (3) a transfer layer positioned on the silicon dioxide layer, wherein the transfer layer comprises a silicon wafer having a thickness that is a range of 500 to 5000 angstroms.

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Patent Owner(s)

Patent OwnerAddress
CROCKETT ADDISONTEMPE AZ

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bowman, Ron Chandler, US 6 25
Franklin, Mark Scottsdale, US 10 201

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3335716251501 - 1011 - 20020004000600080001000012000140001600018000200002200024000260002800030000320003400036000

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