Ultra narrow trench patterning with dry plasma etching

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United States of America Patent

PATENT NO 11894237
APP PUB NO 20220285165A1
SERIAL NO

17826528

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Abstract

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A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chao-Hsuan Hsinchu, TW 13 9
Huang, Yuan-Sheng Taichung, TW 42 174

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