Trench process for dense VCSEL design

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United States of America Patent

PATENT NO 11876348
SERIAL NO

17032673

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Abstract

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Trenched VCSEL emitter structures are described. In an embodiment, an emitter structure includes a cluster of non-uniformly distributed emitters in which each emitter includes an inside mesa trench and an oxidized portion of an oxide aperture layer extending from the inside mesa trench. An outside moat trench is located adjacent the inside mesa trench and is formed to a depth past the oxide aperture layer.

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Patent Owner(s)

Patent OwnerAddress
APPLE INCONE APPLE PARK WAY CUPERTINO CA 95014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Noorlag, Date J Seongnam, KR 1 0
Sadaka, Mariam Austin, US 46 1372

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