Semiconductor devices including a support pattern on a lower electrode structure

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United States of America Patent

PATENT NO 11875992
APP PUB NO 20220328303A1
SERIAL NO

17851244

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Abstract

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Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD416 MAETAN-DONG YEONGTONG-GU SUWON-SI GYEONGGI-DO 442-742

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Sanghyuck Daegu, KR 14 13
Cho, Gihee Yongin-si, KR 16 20
Kang, Jungoo Seoul, KR 19 13
Lee, Hyun-Suk Suwon-si, KR 59 874

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