Method for manufacturing a sensor device with a buried deep trench structure and sensor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11869919
APP PUB NO 20210167117A1
SERIAL NO

17104568

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Abstract

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A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES DRESDEN GMBH & CO KGKÖNIGSBRÜCKERSTR 180 DRESDEN 01099

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Binder, Boris Dresden, DE 20 92
Feick, Henning Dresden, DE 43 1331
Glemet, Magali Dresden, DE 3 3
Offenberg, Dirk Dresden, DE 33 85

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