Semiconductor memory device and memory system including the same

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United States of America Patent

PATENT NO 11869574
APP PUB NO 20230029968A1
SERIAL NO

17674908

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Abstract

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A semiconductor memory device includes a mode register set and a clock correction circuit. The mode register set stores a first control code set. During a duty training interval based on a duty training command, the clock correction circuit may divide the duty training interval into a first interval, a second interval and a third interval which are consecutive, may correct a phase skew of a first clock signal and a third clock signal during the first interval, may correct a phase skew of a second clock signal and a fourth clock signal during the second interval, and may correct a phase skew of the first clock signal and the fourth clock signal during the third interval. The semiconductor memory device may enhance signal integrity of clock signals by correcting duty errors and phase skews of the clock signals having multi-phases during the duty training interval.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Hojun Seoul, KR 6 2
Choi, Hundae Hwaseong-si, KR 12 53

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