Semiconductor device having a bidirectional switch and discharge circuit

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United States of America Patent

PATENT NO 11862630
APP PUB NO 20190326280A1
SERIAL NO

15960175

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Abstract

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A semiconductor device includes a main bi-directional switch formed on a semiconductor substrate and having first and second gates, a first source electrically connected to a first voltage terminal, a second source electrically connected to a second voltage terminal, and a common drain. The semiconductor device further includes a discharge circuit having a plurality of individual transistors or an auxiliary bi-directional switch monolithically integrated with the main bi-directional switch and connected in a common source configuration to the semiconductor substrate. The plurality of individual transistors or the auxiliary bi-directional switch includes a first drain connected to the first source of the main bi-directional switch, a second drain connected to the second source of the main bi-directional switch, and first and second gates each decoupled from gate drive circuitry so that the first and the second gates are controlled at least passively and based on a state of the main bi-directional switch.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AG2 SIEMENS STREET VILLACH AUSTRIA VILLACH CARINTHIA

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imam, Mohamed Chandler, US 38 289
Kim, Hyeongnam Chandler, US 16 52
Leong, Kennith Kin Villach, AT 44 253
Pandya, Bhargav Chandler, US 7 26
Prechtl, Gerhard Rosegg, AT 76 479

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