Photomask including fiducial mark and method of making a semiconductor device using the photomask
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United States of America Patent
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Jan 2, 2024
Grant Date -
Nov 10, 2022
app pub date -
Jul 26, 2022
filing date -
Jun 19, 2017
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Abstract
A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.
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