Semiconductor devices, hybrid transistors, and related methods
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United States of America Patent
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Dec 26, 2023
Grant Date -
Jun 17, 2021
app pub date -
Feb 23, 2021
filing date -
Aug 31, 2017
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Abstract
Methods of forming a semiconductor device are disclosed. A method comprising forming a hybrid transistor supported by a substrate. Forming the hybrid transistor comprises forming a source including a first low bandgap high mobility material, and forming a channel including a high bandgap low mobility material coupled with the first low bandgap high mobility material. Forming the hybrid transistor further comprises forming a drain including a second low bandgap high mobility material coupled with the a high bandgap low mobility material, and forming a gate separated from the channel via a gate oxide material. Methods of forming a transistor are also disclosed.
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