Three-dimensional semiconductor memory device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11854982
APP PUB NO 20230056261A1
SERIAL NO

17982255

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Abstract

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A three-dimensional semiconductor memory device may include a first stack structure block including first stack structures arranged in a first direction on a substrate, a second stack structure block including second stack structures arranged in the first direction on the substrate, a separation structure disposed on the substrate between the first and second stack structure blocks and including first mold layers and second mold layers, and a contact plug penetrating the separation structure. A bottom surface of the contact plug may contact the substrate.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Yonghyuk Suwon-si, KR 29 55
Jeon, Hongsoo Suwon-si, KR 22 22
Lim, Bongsoon Seoul, KR 46 129
Nam, Sang-Wan Hwaseong-si, KR 140 2935
Park, Sang-Won Seoul, KR 44 719
Shim, Sang-Won Seoul, KR 31 301

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