Multi-gate device and related methods

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11854908
APP PUB NO 20220270934A1
SERIAL NO

17662569

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiang, Kuo-Cheng Hsinchu County, TW 533 619
Jhan, Yi-Ruei Keelung, TW 59 38
Ju, Shi Ning Hsinchu, TW 209 1001
Lin, Zhi-Chang Hsinchu County, TW 162 353
Pan, Kuan-Ting Taipei, TW 137 285
Su, Huan-Chieh Changhua County, TW 209 239
Wang, Chih-Hao Hsinchu County, TW 1232 8869

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