Low turn on and high breakdown voltage lateral diode
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 19, 2023
Grant Date -
N/A
app pub date -
Mar 19, 2021
filing date -
Mar 19, 2020
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A hybrid Schottky diode is described herein where the forward characteristics are determined by the metal-semiconductor junction, and the reverse characteristics and breakdown are determined by the metal/dielectric/semiconductor junction. Experimental demonstration of such hybrid Schottky diodes shows significant improvement in the breakdown performance with average breakdown field up to 2.22 MV/cm with reduced turn on of 0.47 V and enable state-of-art power switching figure of merit for GaN lateral Schottky diodes.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully