Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator

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United States of America Patent

PATENT NO 11848211
APP PUB NO 20230207321A1
SERIAL NO

18111923

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×1021 cm−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a first position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×1018 cm−3 and a carbon concentration at the first position is equal to or less than 1×1018 cm−3, and a nitrogen concentration at a second position 1 nm away from the peak to the side of the silicon carbide layer is equal to or less than 1×1018 cm−3.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAKANAGAWA KANAGAWA

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Toshihide Shibuya, JP 54 255
Nakabayashi, Yukio Yokohama, JP 35 383
Nishio, Johji Machida, JP 92 1303
Ota, Chiharu Kawasaki, JP 57 288
Shimizu, Tatsuo Shinagawa, JP 299 2391

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