Semiconductor devices with single-photon avalanche diodes, light scattering structures, and multiple deep trench isolation structures
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United States of America Patent
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Dec 5, 2023
Grant Date -
Jun 10, 2021
app pub date -
Oct 21, 2020
filing date -
Dec 4, 2019
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Abstract
An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.
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