Control of semiconductor devices

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United States of America Patent

PATENT NO 11831311
SERIAL NO

17536637

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Abstract

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This application relates to control of semiconductor devices, in particular MOS devices, so as to reduce RTS/flicker noise. A circuit (100) includes a first MOS device (103, 104) and a bias controller (107). The circuit is operable in at least a first circuit state (PRO) in which the first MOS device is active to contribute to a first signal (Sout) and a second circuit state (PRST) in which the first MOS device does not contribute to the first signal. The bias controller is operable to control voltages at one or more terminals of the first MOS device to apply a pre-bias (VPB1, VPB2) during an instance of the second circuit state. The pre-bias is applied to set an occupancy state of charge carriers traps within the first MOS device, to limit noise during subsequent operation in the first circuit state. In embodiments, the bias controller is configured so that at least one parameter of the pre-bias is selectively variable in use based on one or more operating conditions.

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Patent Owner(s)

Patent OwnerAddress
CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTDSCOTLAND EDINBURGH ENGLAND EDINBURGH EDINBURGH

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lesso, John Paul Edinburgh, GB 208 2319
Pennock, John Laurence Juniper Green, GB 27 399

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