Stripping method and stripping device for silicon carbide single crystal wafers
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United States of America Patent
Stats
-
Nov 28, 2023
Grant Date -
Mar 9, 2023
app pub date -
Nov 15, 2022
filing date -
Nov 15, 2021
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The present disclosure relates to the field of manufacturing of silicon carbide (SiC) single crystal wafers, and discloses a stripping method and a stripping device for SiC single crystal wafers. The single crystal wafers obtained by the present disclosure have no damage layer or stress residue on surfaces or sub-surfaces, and are simple in operation and low in cost.
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International Classification(s)
- 2022 Application Filing Year
- C30B Class
- 502 Applications Filed
- 148 Patents Issued To-Date
- 29.49 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- C30B Class
- 0 % this patent is cited more than
- 2 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 3.5 Year Payment | $1600.00 | $800.00 | $400.00 | May 28, 2027 |
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | May 28, 2031 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | May 28, 2035 |
