Field effect transistor and associated manufacturing method
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United States of America Patent
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Nov 21, 2023
Grant Date -
Sep 30, 2021
app pub date -
Aug 8, 2019
filing date -
Aug 10, 2018
priority date (Note) -
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status (Latency Note)
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Abstract
A field effect transistor includes a substrate; a semiconductor structure formed on a main face of the substrate, the semiconductor structure including a channel area; a first electrode and a second electrode between which extends the channel area, the first electrode including a plurality of portions spaced apart from each other, each portion of the first electrode contributing to forming an elementary transistor referred to as island; connection tracks for electrically connecting the portions of the first electrode to one another; and in which each portion of the first electrode is connected to a connection track through a fuse area, each fuse area associated with the portion of the first electrode of an island being capable of being broken in such a way as to electrically insulate said island if it is defective.
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