Reflective mask blank for EUV lithography, mask blank for EUV lithography, and manufacturing methods thereof
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United States of America Patent
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Nov 21, 2023
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app pub date -
Jul 22, 2021
filing date -
Jul 28, 2020
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Abstract
A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.
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