Method for reducing lateral growth of GaN crystals in an ammonothermal crystal growing process

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United States of America Patent

PATENT NO 11821108
APP PUB NO 20220411955A1
SERIAL NO

17844148

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Abstract

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The present invention relates to a method for reducing lateral growth as well as growth of the bottom surface of crystals in a crystal growing process, wherein before the crystal seed undergoes a growing process the method includes a step of wrapping the crystal seed with metal foil so that all the side surfaces as well as the bottom surface of the crystal seed are surrounded by the foil.

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Patent Owner(s)

Patent OwnerAddress
INSTYTUT WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUK01-142 WARSZAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bockowski, Michal Warsaw, PL 3 87
Grabianska, Karolina Warsaw, PL 1 0
Kucharski, Robert Warsaw, PL 4 16

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