Termination structures with reduced dynamic output capacitance loss

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United States of America Patent

PATENT NO 11817478
SERIAL NO

17247796

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Abstract

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In a general aspect, a semiconductor device can include a substrate of a first conductivity type, an active region disposed in the substrate, and a termination region disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (JTE) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The JTE can have a first depletion stopper region disposed in an upper portion of the JTE, a second depletion stopper region disposed in a lower portion of the JTE, and a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region.

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Patent Owner(s)

  • SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Allerstam, Fredrik Solna, SE 5 0
Domeij, Martin Sollentuna, SE 15 48
Konstantinov, Andrei Sollentuna, SE 50 544
Lim, Jangkwon Nacka, SE 1 0
Neyer, Thomas Munich, DE 20 21
Roig-Guitart, Jaume Oudenaarde, BE 30 103

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