High-silicon-content wet-removable planarizing layer
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United States of America Patent
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Nov 14, 2023
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app pub date -
Oct 26, 2020
filing date -
Oct 24, 2019
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Abstract
Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.
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