Reflective type blankmask and photomask for EUV
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 14, 2023
Grant Date -
Jul 8, 2021
app pub date -
Jan 8, 2021
filing date -
Jan 8, 2020
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer. The uppermost layer contains Ta and O. The plurality of layers contain Ta and are configured so that a content of N increases upward. As a result, a CD deviation of a pattern of the absorbing film is minimized.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully