Method of acquiring sample for evaluation of SiC single crystal
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United States of America Patent
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Nov 14, 2023
Grant Date -
Jun 11, 2020
app pub date -
Dec 3, 2019
filing date -
Dec 5, 2018
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Abstract
A method of acquiring a sample for evaluation of a SiC single crystal, comprising: a step of cutting a SiC ingot in a radial direction at a thickness position, which is located in a range from a curved surface which forms a distal end surface in a crystal growth direction to a seed crystal, to obtain a head member which includes the curved surface, wherein the SiC ingot used in the step is a SiC ingot in which SiC thereof is crystal-grown from a seed crystal along a c axis direction; and a step of polishing a silicon surface of the head member to obtain a sample for evaluation.
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