Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same

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United States of America Patent

PATENT NO 11814561
SERIAL NO

17288248

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Abstract

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Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CxFySz where x, y, and z are 2≤x≤5, y≤2x, and 1≤z≤2.

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Patent Owner(s)

  • KANTO DENKA KOGYO CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kato, Korehito Gunma, JP 15 15
Shimizu, Hisashi Gunma, JP 65 856

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