Method for induced quantum dots for material characterization, qubits, and quantum computers

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United States of America Patent

PATENT NO 11810968
SERIAL NO

17864617

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Abstract

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A method is disclosed, including positioning a lead wire of a gate chip at a distance of less than 10 nm from a semiconductor heterostructure. The heterostructure includes a surface layer and a subsurface layer. The method also includes inducing an electrostatic potential in the subsurface layer by applying a voltage to the lead wire. The method also includes loading a charge carrier into the subsurface layer. The method also includes detecting the charge carrier in the subsurface layer of the semiconductor heterostructure by emitting a radio-frequency pulse using a resonator coupled to the at least one lead wire of the gate chip, detecting a reflected pulse of the emitted radio-frequency pulse, and determining a phase shift of the reflected pulse relative to the emitted radio-frequency pulse. The method also includes characterizing the quantum dot by measuring valley splitting of the quantum dot.

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Patent Owner(s)

Patent OwnerAddress
GOVERNMENT OF THE UNITED STATES AS REPRESENTED BY THE DIRECTOR NATIONAL SECURITY AGENCY9800 SAVAGE ROAD SUITE 6542 FT MEADE MD 20755

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hristov, Rousko Todorov College Park, US 4 31
Hurst, Hilary Washington, US 2 1
Shim, Yun-Pil Marriotsville, US 4 73
Tahan, Charles George Kensington, US 9 128

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