Photosensitive resin composition, polyimide production method, and semiconductor device
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United States of America Patent
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Nov 7, 2023
Grant Date -
Aug 25, 2022
app pub date -
May 16, 2022
filing date -
Aug 21, 2015
priority date (Note) -
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Abstract
A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (ii) a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (iii) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.
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