Semiconductor device comprising first and second conductors
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United States of America Patent
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Oct 31, 2023
Grant Date -
Dec 2, 2021
app pub date -
Aug 16, 2021
filing date -
Jan 14, 2011
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Abstract
The memory capacity of a DRAM is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer. That is, the memory cell array overlaps with the driver circuit. Accordingly, the integration degree of the semiconductor memory device can be increased as compared to the case where a driver circuit and a memory cell array are provided in the same plane of a substrate containing a singe crystal semiconductor material.
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