Method of manufacturing composite substrate

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United States of America Patent

PATENT NO 11804818
SERIAL NO

16475528

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Abstract

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A method of manufacturing a composite substrate that includes bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding. The piezoelectric material substrate is particularly preferably a lithium tantalate wafer (LT) substrate or a lithium niobate (LN) substrate.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTDTOKYO TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Shoji Gunma, JP 180 1705
Shirai, Shozo Gunma, JP 18 69
Tanno, Masayuki Gunma, JP 37 166

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