Dry etching gas composition comprising sulfur-containing fluorocarbon compound and dry etching method using the same

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United States of America Patent

PATENT NO 11795397
SERIAL NO

17577554

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Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiO2 over low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC). A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CxFySz where x, y, and z are 2≤x≤5, y≤2x, and 1≤z≤2.

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Patent Owner(s)

  • KANTO DENKA KOGYO CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kato, Korehito Gunma, JP 15 15
Shimizu, Hisashi Gunma, JP 65 856

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