Polycrystalline film, method for forming polycrystalline film, laser crystallization device and semiconductor device
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United States of America Patent
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Oct 17, 2023
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app pub date -
Dec 15, 2020
filing date -
Jan 10, 2020
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Abstract
The present invention provides a microstructure in which evenly distributed crystal grains line up in parallel lines extending along the surface of the film, and a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains. According to the present invention, there are also provided: a method for forming a polycrystalline film, such as a thin polycrystalline silicon film, a thin aluminum film, and a thin copper film, which is flat and even, in surface, electrically uniform and stable, and mechanically stable; a laser crystallization device for use in manufacture of polycrystalline films, and a semiconductor device using the polycrystalline film and having good electrical property and increased breakdown voltage.
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