Method for removing hard masks

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United States of America Patent

PATENT NO 11788007
SERIAL NO

17389879

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Abstract

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Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.

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Patent Owner(s)

Patent OwnerAddress
ENTEGRIS INC129 CONCORD ROAD BILLERICA MA 01821

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cooper, Emanuel I Scarsdale, US 71 1001
Wu, Hsing-Chen Hsinchu, TW 12 61
Yang, Min-Chieh Hsinchu, TW 33 220

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