Highly reliable physically unclonable function
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United States of America Patent
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Oct 10, 2023
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N/A
app pub date -
Apr 19, 2023
filing date -
Jun 9, 2022
priority date (Note) -
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Abstract
Disclosed is a highly reliable physically unclonable function technology. In a tunneling-based memory device disclosed herein, a conductive layer (e.g., Al2O3) is stacked on a bottom electrode, an oxide layer (e.g., TiOx) is stacked on the conductive layer, and a top electrode is stacked on the oxide layer. The tunneling-based memory device has a structure of a memristor crossbar array and has a current-voltage characteristic independent of a temperature that is an external environmental variable due to a tunneling mechanism when constructing an unpredictable physically unclonable function (PUF) of hardware as a memory semiconductor array.
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