Three dimensional integrated circuit and fabrication thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11784119
APP PUB NO 20220319982A1
SERIAL NO

17409092

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Abstract

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An IC structure comprises a first transistor formed on a substrate, a first interconnect structure over the first transistor, a dielectric layer over the first interconnect structure, a plurality of 2D semiconductor islands on the dielectric layer, and a plurality of second transistors formed on the plurality of 2D semiconductor islands.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSIN-CHU
NATIONAL YANG MING CHIAO TUNG UNIVERSITYTAIPEI

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Shu-Jui Hsinchu County, TW 16 58
Chou, Chen-Han Tainan, TW 10 22
Ho, Yen-Teng Hsinchu, TW 10 23
Hu, Chenming Oakland, US 194 10122
Peng, Kai-Yu Miaoli County, TW 5 1
Shen, Cheng-Hung New Taipei, TW 4 1
Wu, Chia-Hsing New Taipei, TW 6 4

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