Compensation for leakage in an array of analog neural memory cells in an artificial neural network
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United States of America Patent
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Oct 10, 2023
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Oct 6, 2022
app pub date -
Jun 13, 2022
filing date -
Jul 19, 2019
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Abstract
In one example, a method is disclosed of compensating for leakage in an array of analog neural non-volatile memory cells, wherein the array is arranged in rows and columns, wherein each row is coupled to a word line and each column is coupled to a bitline, the method comprising measuring leakage for a column of analog neural non-volatile memory cells coupled to a bitline; storing the measured leakage value; and applying the measured leakage value during a read operation of the column of analog neural non-volatile memory cells to compensate for the leakage.
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