Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 11778922
SERIAL NO

17533003

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Abstract

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A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPSCIENCE-BASED INDUSTRIAL PARK NO 3 INDUSTRY E ROAD III HSINCHU CITY R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun-Lung Tainan, TW 129 867
Gao, Wei-Xin Tainan, TW 16 3
Hou, Tai-Cheng Tainan, TW 29 9
Hsieh, Chin-Yang Tainan, TW 46 103
Huang, Wei-Hao New Taipei, TW 52 210
Jhang, Jing-Yin Tainan, TW 73 124
Lai, Yu-Tsung Tainan, TW 53 258
Li, Chih-Yueh Taipei, TW 31 91
Li, Kun-Ju Tainan, TW 51 75
Liao, Kun-Yuan Hsinchu, TW 52 282
Lu, Chia-Lin Taoyuan, TW 59 325
Tsai, Bin-Siang Changhua County, TW 102 86
Tsai, Fu-Yu Tainan, TW 65 72
Wang, Hui-Lin Taipei, TW 132 187
Weng, Chen-Yi New Taipei, TW 75 176

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