Double magnetic tunnel junction device

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United States of America Patent

PATENT NO 11778921
SERIAL NO

17128330

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Abstract

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A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a second magnetic tunnel junction stack on the spin conducting layer, and forming a dielectric spacer layer on surfaces of the spin conducting layer and the second magnetic tunnel junction stack. The second magnetic tunnel junction stack has a width that is less than a width of the first magnetic tunnel junction stack. Also, a width of the spin conducting layer increases in a thickness direction from a first side of the spin conducting layer adjacent to the second magnetic tunnel junction stack to a second side of the spin conducting layer adjacent to the first magnetic tunnel junction stack.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doris, Bruce B Slingerlands, US 797 13759
Hashemi, Pouya Purchase, US 602 5206
Kothandaraman, Chandrasekharan New York, US 140 1316
Sun, Jonathan Zanhong Shrub Oak, US 29 1840

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