MXene layers as substrates for growth of highly oriented perovskite thin films

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United States of America Patent

PATENT NO 11773480
APP PUB NO 20200240000A1
SERIAL NO

16756337

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Abstract

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The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

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DREXEL UNIVERSITY3141 CHESTNUT STREET PHILADELPHIA PA 19104

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anasori, Babak Fisher, US 21 28
Bennett-Jackson, Andrew Lewis Montclair, US 1 2
Falmbigl, Matthias Philadelphia, US 3 3
Gogotsi, Yury Warminster, US 96 1236
Gu, Zongquan Chalfont, US 5 6
Imbrenda, Dominic Deptford, US 1 2
Spanier, Jonathan E Bala Cynwyd, US 23 211

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