Devices and methods for controlling wafer uniformity in plasma-based process

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United States of America Patent

PATENT NO 11769652
SERIAL NO

16525330

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Abstract

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Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDNO 8 LI-HSIN RD 6 HSIN-CHU SCIENCE PARK HSIN-CHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun Yan Zhubei, TW 13 7
Chen, Jr-Sheng Hsinchu, TW 15 6
Chiang, Yu-Pei Hsinchu, TW 13 7
Hsu, Chih-Hsien Hsinchu, TW 32 179
Huang, Shih-Che Zhubei, TW 23 361
Huang, Zhi-Hao Hsin-Chu, TW 4 1
Li, An-Chi Hsin-Chu, TW 6 3
Wang, Ming Chih Hsin-Chu, TW 3 0

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