Low-dislocation bulk GaN crystal and method of fabricating same

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United States of America Patent

PATENT NO 11767609
APP PUB NO 20210355598A1
SERIAL NO

17306239

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Abstract

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GaN wafers and bulk crystal have dislocation density approximately 1/10 of dislocation density of seed used to form the bulk crystal and wafers. Masks are formed selectively on GaN seed dislocations, and new GaN grown on the seed has fewer dislocations and often 1/10 or less of dislocations present in seed.

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Patent Owner(s)

Patent OwnerAddress
SIXPOINT MATERIALS INC37 INDUSTRIAL WAY UNIT 106 BUELLTON CA 93427

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Tadao Santa Barbara, US 93 1210

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