Semiconductor device with controllable channel length and manufacturing method thereof
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United States of America Patent
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Sep 19, 2023
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N/A
app pub date -
Mar 8, 2022
filing date -
Jul 24, 2019
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Abstract
A semiconductor device includes a ring-shaped gate electrode having an opening area disposed on a substrate, a source region and a bulk tap region disposed in the opening area, a well region disposed to overlap the ring-shaped gate electrode, a drift region disposed to be in contact with the well region, a first insulating isolation region disposed, on the drift region, to partially overlap the gate electrode, a second insulating isolation region enclosing the bulk tap region, a drain region disposed to be spaced apart from the ring-shaped gate electrode, and a deep trench isolation region disposed adjacent to the drain region.
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