Method of forming semiconductor structure

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United States of America Patent

PATENT NO 11764062
APP PUB NO 20190148146A1
SERIAL NO

16175819

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Abstract

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A method of forming a semiconductor structure is disclosed. A multi-layer structure is formed over a substrate. A photoresist stack with a stepped sidewall is formed on the multi-layer structure. A pattern of the photoresist stack is transferred to the multi-layer structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Fu-Cheng Tainan, TW 43 93
Lin, Ping-Hao Tainan, TW 25 65

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