Method of making semiconductor device and semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11763061
APP PUB NO 20220366117A1
SERIAL NO

17815668

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Abstract

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A method of making a semiconductor structure includes forming a plurality of gate electrodes over a plurality of active regions. The method further includes increasing a width of a portion of each of the plurality of gate electrodes between adjacent active regions of the plurality of active regions, wherein increasing the width of the portion of each of the plurality of gate electrodes comprises increasing the width of less than an entirety of each of the plurality of gate electrodes between the adjacent active regions. The method further includes removing a central region of each of the plurality of gate electrodes, wherein the central region has the increased width, and removing the central region comprises removing less than an entirety of the portion of each of the plurality of gate electrodes.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

International Classification(s)

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  • 2022 Application Filing Year
  • H01L Class
  • 27731 Applications Filed
  • 8200 Patents Issued To-Date
  • 29.57 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yu-Jen Hsinchu, TW 328 929
Huang, I-Shan Hsinchu, TW 20 28
Hung, Chan-Yu Hsinchu, TW 17 12
Wang, Ling-Sung Hsinchu, TW 120 1168

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges267496640503371201 - 1011 - 2021 - 3031 - 4041 - 5051 - 60020004000600080001000012000140001600018000200002200024000260002800030000

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